Program

Conference program : OSEPI_Program_final_11.pdf

Presentations will be given in french or english, at the speaker's choice. Slides have to be prepared in english

Plenary talks

Clément Merckling (IMEC, Belgique) :

    About the central role of materials exploration and crystal growth in advance and future electronic, photonic and quantum devices

Judith Driscoll (Univ. Cambridge) :

    The potential for enhanced functional properties offered by vertically aligned nano composite films

Eric Tournié (IES Montpellier) :

    MBE : some challenges and evolutions

Session I : Growth mechanisms

Invited "oxides" : Roman Engel-Herbert (Paul Drude Institute, Berlin) :

    Hybrid oxide MBE: possible pathway to achieve semiconductor grade complex oxide thin films?

 Invited "semiconductors" : Jean-Christophe Harmand (C2N Saclay) :

    Some mechanisms of III-V nanowire growth

 Session II : Structural and functional characterization

Invited "oxides" : Laura Bocher (LPS Orsay) :

    How will electron spectromicroscopy reveal "all the secrets" of your oxides down to the atomic scale? ... at least their structural, chemical, and electronic features

Invited "semiconductors" : Julien Barjon (GEMaC Versailles) :

    Characterisation of defects in wide bandgap semiconductors

Session III : Properties engineering using epitaxy

Invited "oxides" : Daniele Preziosi (IPCMS Strasbourg) :

    Stabilization of nickelate infinite-layer phase: from 'soft-chemistry' to 'soft-physics'

Invited "semiconductors" : Fabrice Semond (CHREA Valbonne) :

    Niobium nitride, a newcomer to the III-nitride semiconductor family: Epitaxy of metal/semiconductor, semiconductor/superconductor hybrid heterostructures

Session IV : Hybridization

Invited "oxides" : Valérie Demange (ISCR Rennes) :

    Oxide nanosheets as seed layers for growth of complex oxides

Invited "semiconductors" : Charles Cornet (FOTON Rennes) :

    III-V/Si epitaxial growth and antiphase domains: a matter of symmetry

Session V : From properties to devices

Invited "oxides" : Vincent Garcia (CNRS-Thales Palaiseau) :

    Scanning probe microscopy for functional oxide thin films

Invited "semiconductors" : Maria Tchernycheva (C2N Saclay) :

   Nitride nanowire light emitting diodes: from single wire properties to device applications

Invited "oxides" : Guillaume Agnus (C2N Saclay) :

    Oxide thin films processing: some examples on how to take advantage of perovskite properties into devices

Invited "semiconductors" : Maëva Fagot (IES Montpellier) :

    Mid-IR lasers grown on highly mismatched substrates