Invités

Guillaume Agnus (C2N Saclay)

   Oxide thin films processing: some examples on how to take advantage of perovskite properties into devices 

 

Julien Barjon (GEMaC Versailles)

  Characterisation of defects in wide bandgap semiconductors

 

Laura Bocher (LPS Orsay)

   How will electron spectromicroscopy reveal "all the secrets" of your oxides down to the atomic scale? ... at least their    structural,    chemical, and electronic features !

 

Maëva Fagot (IES Montpellier)

   Mid-IR lasers grown on highly mismatched substrates

 

Charles Cornet (FOTON Rennes)

    III-V/Si epitaxial growth and antiphase domains: a matter of symmetry

 

Valérie Demange (ISCR Rennes)

   Oxide nanosheets as seed layers for growth of complex oxides

 

Judith Driscoll (Cambridge university)

  The potential for enhanced functional properties offered by vertically aligned nano composite films

 

Roman Engel-Herbert (Paul Drude Institute Berlin)

 Hybrid oxide MBE: possible pathway to achieve semiconductor grade complex oxide thin films?  

 

Vincent Garcia (CNRS-Thales Palaiseau)

    Scanning probe microscopy for functional oxide thin films

 

Jean-Christophe Harmand (C2N Saclay)

   Some mechanisms of III-V nanowire growth

 

Clément Merckling (IMEC Belgium)

      About the central role of materials exploration and crystal growth in advance and future electronic, photonic and quantum devices

 

Daniele Preziosi (IPCMS Strasbourg)

   Stabilization of nickelate infinite-layer phase: from 'soft-chemistry' to 'soft-physics'

 

Fabrice Semond (CRHEA Valbonne)

   Niobium nitride, a newcomer to the III-nitride semiconductor family: Epitaxy of metal/semiconductor, semiconductor/superconductor hybrid heterostructures

 

Maria Tchernycheva (C2N Saclay)

   Nitride nanowire light emitting diodes: from single wire properties to device applications

 

Eric Tournié (IES Montpellier)

   MBE : some challenges and evolution

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